Prof. Vanessa Sih
University of Michigan
Abstract
Spin orbit coupling is a consequence of relativity but can be observed and used at the device scale to electrically initialize and manipulate electron spin polarization. Understanding how to exploit spin orbit effects in semiconductors may enable the development of new devices with enhanced functionality and performance, such as spin based devices that combine logic and storage and fast optical switches for information processing. In this talk, Sih describe time and spatially resolved measurements of electron spin transport that enable sensitive measurements of the spin orbit field and its dependence on applied electric fields and mechanical strain. These spin splittings also provide a mechanism for the electrical generation of spin polarization.
Seminar flyer: Mapping Spin-Orbit Effects in Semiconductors
Originally published at physics.nd.edu.