Enhancing strain to develop the next generation of magnetic materials for memory devices
Dr. Michelle Jamer
In modern magnetic memory devices, there is a limit for the number of ferromagnetic components that can be incorporated due to size limitations. By switching the type of magnetism used in the device from ferromagnetism (where magnetic spins align) to antiferromagnetism (where magnetic spins are anti-aligned), it is estimated we can improve the life and reliability of the current technology. This talk will focus on the metamagnetic material Fe3Ga4 which has two magnetic transitions, and how through strain we can tune the magnetic transition temperature - and how this change can improve devices for the future.
Hosted by Prof. Assaf
Originally published at physics.nd.edu.